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Phonon Transport in GaAs and InAs Twinning Superlattices | The Journal of Physical Chemistry C
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Gaaselement H180xB180 cm. Maas 10x10 cm.
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Simultaneous effect of impurities, hydrostatic pressure, and applied potential on the optical absorptions in a GaAs field-effect transistor - ScienceDirect
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AFM image of (a): InP buffer on GaAs substrate; (b): inverted InGaAs... | Download Scientific Diagram
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Nanoscale investigation of a radial p–n junction in self-catalyzed GaAs nanowires grown on Si (111) - Nanoscale (RSC Publishing)
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New method to make gallium arsenide solar cells
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